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IRFSL11N50A

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IRFSL11N50A Image

The IRFSL11N50A from Vishay is a MOSFET with Continous Drain Current 11 A, Drain Source Resistance 550 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRFSL11N50A can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFSL11N50A
  • Manufacturer
    Vishay
  • Description
    500 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 A
  • Drain Source Resistance
    550 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    51 nC
  • Power Dissipation
    190 W
  • Temperature operating range
    -55 to 175 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    I2PAK (TO-262)

Technical Documents
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