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Si2325DS

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The Si2325DS from Vishay is a MOSFET with Continous Drain Current 0.69 A, Drain Source Resistance 1000 to 1300 milliohm, Drain Source Breakdown Voltage -150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -4.5 V. Tags: Surface Mount. More details for Si2325DS can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si2325DS
  • Manufacturer
    Vishay
  • Description
    150 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.69 A
  • Drain Source Resistance
    1000 to 1300 milliohm
  • Drain Source Breakdown Voltage
    -150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -4.5 V
  • Gate Charge
    7.7 to 12 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Active Clamp Circuits in DC/DC Power Supplies

Technical Documents
View details on the manufacturer's website
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