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Si2329DS

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Si2329DS Image

The Si2329DS from Vishay is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 25 to 120 milliohm, Drain Source Breakdown Voltage -8 V, Gate Source Voltage -5 to 5 V, Gate Source Threshold Voltage -0.35 to -0.8 V. Tags: Surface Mount. More details for Si2329DS can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si2329DS
  • Manufacturer
    Vishay
  • Description
    8 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    25 to 120 milliohm
  • Drain Source Breakdown Voltage
    -8 V
  • Gate Source Voltage
    -5 to 5 V
  • Gate Source Threshold Voltage
    -0.35 to -0.8 V
  • Gate Charge
    19.3 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load Switch, Low Voltage Gate Drive - Low On-Resistance, Battery Management in Portable Equipment

Technical Documents
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