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Si2399DS

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Si2399DS Image

The Si2399DS from Vishay is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 28 to 67 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.6 to -1.5 V. Tags: Surface Mount. More details for Si2399DS can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si2399DS
  • Manufacturer
    Vishay
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    28 to 67 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.6 to -1.5 V
  • Gate Charge
    10 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load Switch, PA Switch, DC/DC Converters

Technical Documents
View details on the manufacturer's website
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