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Si4100DY

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Si4100DY Image

The Si4100DY from Vishay is a MOSFET with Continous Drain Current 6.8 A, Drain Source Resistance 5.1 to 8.4 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4.5 V. Tags: Surface Mount. More details for Si4100DY can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si4100DY
  • Manufacturer
    Vishay
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.8 A
  • Drain Source Resistance
    5.1 to 8.4 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4.5 V
  • Gate Charge
    13.5 nC
  • Power Dissipation
    6 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    High Frequency Boost Converter, LED Backlight for LCD TV

Technical Documents
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