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Si4491EDY

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The Si4491EDY from Vishay is a MOSFET with Continous Drain Current -25.8 A, Drain Source Resistance 5 to 11.2 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -1.2 to -2.8 V. Tags: Surface Mount. More details for Si4491EDY can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si4491EDY
  • Manufacturer
    Vishay
  • Description
    30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -25.8 A
  • Drain Source Resistance
    5 to 11.2 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -1.2 to -2.8 V
  • Gate Charge
    102 nC
  • Power Dissipation
    6.9 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Adaptor switch, load switch, Power management, Notebook computers and portable battery packs

Technical Documents
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