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Si5442DU

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Si5442DU Image

The Si5442DU from Vishay is a MOSFET with Continous Drain Current 25 A, Drain Source Resistance 8 to 13.5 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 0.9 V. Tags: Surface Mount. More details for Si5442DU can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si5442DU
  • Manufacturer
    Vishay
  • Description
    -8 to 8 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25 A
  • Drain Source Resistance
    8 to 13.5 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 0.9 V
  • Gate Charge
    16.6 to 45 nC
  • Power Dissipation
    31 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK ChipFET
  • Applications
    Load Switch, PA Switch, and for Portable Applications, Point-of-Load, DC/DC Converters, Power Management

Technical Documents
View details on the manufacturer's website
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