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Si5513CDC

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The Si5513CDC from Vishay is a MOSFET with Continous Drain Current 3.7 A, Drain Source Resistance 45 to 255 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.5 to 1.5 V. Tags: Surface Mount. More details for Si5513CDC can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si5513CDC
  • Manufacturer
    Vishay
  • Description
    -12 to 12 V, Dual, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3.7 A
  • Drain Source Resistance
    45 to 255 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.5 to 1.5 V
  • Gate Charge
    2.8 to 56 nC
  • Power Dissipation
    3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    1206-8 ChipFET
  • Applications
    Load Switch for Portable Devices

Technical Documents
View details on the manufacturer's website
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