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IXTK200N10L2

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IXTK200N10L2 Image

The IXTK200N10L2 from Littelfuse is a MOSFET with Continous Drain Current 200 A, Drain Source Resistance 11 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4.5 V. Tags: Through Hole. More details for IXTK200N10L2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTK200N10L2
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 540 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    200 A
  • Drain Source Resistance
    11 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4.5 V
  • Gate Charge
    540 nC
  • Power Dissipation
    1040 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-264
  • Applications
    Solid State Circuit Breakers, Soft Start Controls, Linear Amplifiers, Programmable Loads, Current Regulators

Technical Documents
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