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Si5922DU

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Si5922DU Image

The Si5922DU from Vishay is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 15.5 to 24.5 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for Si5922DU can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si5922DU
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, Dual, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    15.5 to 24.5 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    4.7 to 10 nC
  • Power Dissipation
    10.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK ChipFET
  • Applications
    DC/DC power supply

Technical Documents
View details on the manufacturer's website
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