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Si6423ADQ

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The Si6423ADQ from Vishay is a MOSFET with Continous Drain Current -12.5 A, Drain Source Resistance 8.2 to 22.7 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for Si6423ADQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si6423ADQ
  • Manufacturer
    Vishay
  • Description
    -8 to 8 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12.5 A
  • Drain Source Resistance
    8.2 to 22.7 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    63 nC
  • Power Dissipation
    2.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSSOP-8
  • Applications
    Load switch, Battery switch, Power management

Technical Documents
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