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Si6913DQ

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The Si6913DQ from Vishay is a MOSFET with Continous Drain Current 5.8 A, Drain Source Resistance 16 to 37 Milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.9 to -0.4 V. Tags: Surface Mount. More details for Si6913DQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si6913DQ
  • Manufacturer
    Vishay
  • Description
    -8 to 8 V, Dual, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.8 A
  • Drain Source Resistance
    16 to 37 Milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.9 to -0.4 V
  • Gate Charge
    18.5 nC
  • Power Dissipation
    1.14 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSSOP-8
  • Applications
    Load Switch, Battery Switch

Technical Documents
View details on the manufacturer's website
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