Si7137DP

Note : Your request will be directed to Vishay.

Si7137DP Image

The Si7137DP from Vishay is a MOSFET with Continous Drain Current -60 A, Drain Source Resistance 1.6 to 3.9 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.4 to -0.5V. Tags: Surface Mount. More details for Si7137DP can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    Si7137DP
  • Manufacturer
    Vishay
  • Description
    -12 to 12 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -60 A
  • Drain Source Resistance
    1.6 to 3.9 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.4 to -0.5V
  • Gate Charge
    188 to 390 nC
  • Power Dissipation
    104 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Adaptor switch, Battery switch, Load switch

Technical Documents

Latest MOSFETs

View more products