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Si7900AEDN

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Si7900AEDN Image

The Si7900AEDN from Vishay is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 20 to 36 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 0.9 V. Tags: Surface Mount. More details for Si7900AEDN can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si7900AEDN
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    20 to 36 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 0.9 V
  • Gate Charge
    10.5 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8
  • Applications
    Protection switch for 1-2 Li-ion batter

Technical Documents
View details on the manufacturer's website
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