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Si8806DB

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Si8806DB Image

The Si8806DB from Vishay is a MOSFET with Continous Drain Current 3.9 A, Drain Source Resistance 35 to 75 Milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for Si8806DB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8806DB
  • Manufacturer
    Vishay
  • Description
    12 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.9 A
  • Drain Source Resistance
    35 to 75 Milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    6.5 nC
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    Load switch with low voltage drop, Load switch for low voltage power lines, Smart phones, tablet PCs, mobile computing

Technical Documents
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