The Si8810EDB from Vishay is a MOSFET with Continous Drain Current 2.9 A, Drain Source Resistance 58 to 125 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 0.9 V. Tags: Surface Mount. More details for Si8810EDB can be seen below.