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Si8851EDB

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Si8851EDB Image

The Si8851EDB from Vishay is a MOSFET with Continous Drain Current 16.7 A, Drain Source Resistance 6 to 18.5 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.45 V. Tags: Surface Mount. More details for Si8851EDB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8851EDB
  • Manufacturer
    Vishay
  • Description
    -20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16.7 A
  • Drain Source Resistance
    6 to 18.5 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.45 V
  • Gate Charge
    70 nC
  • Power Dissipation
    3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    attery switch / load switch, Power management, For smart phones, tablet PCs, and mobile computing

Technical Documents
View details on the manufacturer's website
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