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SiA416DJ

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The SiA416DJ from Vishay is a MOSFET with Continous Drain Current 11.3 A, Drain Source Resistance 68 to 130 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.6 to 3 V. Tags: Surface Mount. More details for SiA416DJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiA416DJ
  • Manufacturer
    Vishay
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11.3 A
  • Drain Source Resistance
    68 to 130 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.6 to 3 V
  • Gate Charge
    3.5 to 6.5 nC
  • Power Dissipation
    19 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SC-70
  • Applications
    DC/DC Converters, Full-Bridge Converters, For Power Bricks and POL Power

Technical Documents
View details on the manufacturer's website
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