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SiA430DJT

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SiA430DJT Image

The SiA430DJT from Vishay is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 10.8 to 18.5 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for SiA430DJT can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiA430DJT
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    10.8 to 18.5 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    5.3 to 12 nC
  • Power Dissipation
    19.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Thin PowerPAK SC-70
  • Applications
    Load switch, DC/DC conversion

Technical Documents
View details on the manufacturer's website
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