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SiA459EDJ

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The SiA459EDJ from Vishay is a MOSFET with Continous Drain Current 9 A, Drain Source Resistance 28 to 62 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.6 V. Tags: Surface Mount. More details for SiA459EDJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiA459EDJ
  • Manufacturer
    Vishay
  • Description
    -20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 A
  • Drain Source Resistance
    28 to 62 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.6 V
  • Gate Charge
    10 to 20 nC
  • Power Dissipation
    15.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SC-70
  • Applications
    Portable Devices such as Smart Phones, Tablet PCs and Mobile Computing - DC/DC Converter - Battery Switch - Load Switch - Power Management

Technical Documents
View details on the manufacturer's website
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