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SiHB20N50E

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The SiHB20N50E from Vishay is a MOSFET with Continous Drain Current 19 A, Drain Source Resistance 160 to 184 Milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiHB20N50E can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHB20N50E
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 46 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    19 A
  • Drain Source Resistance
    160 to 184 Milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    46 nC
  • Power Dissipation
    179 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK (TO-263)
  • Applications
    Computing - PC silver box / ATX power supplies, Lighting - Two stage LED lighting, Consumer electronics, Applications using hard switched topologies - Power factor correction (PFC) - Two switch forward converter - Flyback converter, Switch mode power supp

Technical Documents
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