The SiHG64N65E from Vishay is a MOSFET with Continous Drain Current 64 A, Drain Source Resistance 39 to 47 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHG64N65E can be seen below.