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SiHP18N50C

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The SiHP18N50C from Vishay is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 225 to 270 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for SiHP18N50C can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHP18N50C
  • Manufacturer
    Vishay
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    225 to 270 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    65 to 76 nC
  • Power Dissipation
    223 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Medical
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB

Technical Documents
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