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SiHP35N60E-BE3

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The SiHP35N60E-BE3 from Vishay is a MOSFET with Continous Drain Current 32 A, Drain Source Resistance 82 to 94 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHP35N60E-BE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHP35N60E-BE3
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 88 to 132 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    32 A
  • Drain Source Resistance
    82 to 94 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    88 to 132 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Power factor correction power supplies (PFC), Hard switching PWM stages, Computing - Switch mode power supplies (SMPS), Lighting - Light emitting diode (LED) - High intensity discharge (HID), Telecom - Server power supplies, Renewable energy - Photovoltai

Technical Documents
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