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SiHU2N80E-GE3

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SiHU2N80E-GE3 Image

The SiHU2N80E-GE3 from Vishay is a MOSFET with Continous Drain Current 2.8 A, Drain Source Resistance 2380 to 2750 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for SiHU2N80E-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiHU2N80E-GE3
  • Manufacturer
    Vishay
  • Description
    -30 to 30 V, 9.8 to 19.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.8 A
  • Drain Source Resistance
    2380 to 2750 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    9.8 to 19.6 nC
  • Power Dissipation
    62.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    IPAK (TO-251)
  • Applications
    Server and telecom power supplies, Switch mode power supplies (SMPS), Power factor correction power supplies (PFC), Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting, Industrial - Welding - Induction heating - Motor drives - Battery

Technical Documents
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