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SiR112DP-T1-RE3

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The SiR112DP-T1-RE3 from Vishay is a MOSFET with Continous Drain Current 133 A, Drain Source Resistance 1.6 to 2.65 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -16 to 20 V, Gate Source Threshold Voltage 1.1 to 2.4 V. Tags: Surface Mount. More details for SiR112DP-T1-RE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiR112DP-T1-RE3
  • Manufacturer
    Vishay
  • Description
    -16 to 20 V, 28.7 to 89 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    133 A
  • Drain Source Resistance
    1.6 to 2.65 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -16 to 20 V
  • Gate Source Threshold Voltage
    1.1 to 2.4 V
  • Gate Charge
    28.7 to 89 nC
  • Power Dissipation
    62.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Synchronous rectification, OR-ing, High power density DC/DC, VRMs and embedded DC/DC, DC/AC inverters, Load switch

Technical Documents
View details on the manufacturer's website
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