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SiR165DP-T1-GE3

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The SiR165DP-T1-GE3 from Vishay is a MOSFET with Continous Drain Current -60 A, Drain Source Resistance 3.8 to 7.5 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.3 to -1 V. Tags: Surface Mount. More details for SiR165DP-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiR165DP-T1-GE3
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, 44 to 138 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -60 A
  • Drain Source Resistance
    3.8 to 7.5 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.3 to -1 V
  • Gate Charge
    44 to 138 nC
  • Power Dissipation
    65.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Adapter and charger switch, Load switch, Motor drive control, DC/DC converter, Power supplies, Battery management

Technical Documents
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