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SiR178DP-T1-RE3

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The SiR178DP-T1-RE3 from Vishay is a MOSFET with Continous Drain Current 430 A, Drain Source Resistance 0.31 to 1.2 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 12 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for SiR178DP-T1-RE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiR178DP-T1-RE3
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    430 A
  • Drain Source Resistance
    0.31 to 1.2 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    95 to 310 nC
  • Power Dissipation
    104 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Battery management, DC/DC converters, Load switch

Technical Documents
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