The SiRS5700DP-T1-RE3 from Vishay is an N-Channel MOSFET that is ideal for synchronous rectification, DC-DC converters, OR-ing and hot swap switch, power supplies, motor drive control, and battery management applications. It has a drain-source breakdown voltage of over 150 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of 4.6 milli-ohms. This UIS-tested-MOSFET has a continuous drain current of up to 144 A and a power dissipation of less than 278 W. It features TrenchFET Gen V technology and has low drain-source on-resistance × gate charge figure-of-merit (FOM). This RoHS-compliant power MOSFET is available in a surface-mount package that measures 6 x 5 mm.
