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SiS176LDN-T1-GE3

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SiS176LDN-T1-GE3 Image

The SiS176LDN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 42.3 A, Drain Source Resistance 8.6 to 12.5 milliohm, Drain Source Breakdown Voltage 70 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.6 V. Tags: Surface Mount. More details for SiS176LDN-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiS176LDN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    70 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    42.3 A
  • Drain Source Resistance
    8.6 to 12.5 milliohm
  • Drain Source Breakdown Voltage
    70 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.6 V
  • Gate Charge
    9.2 to 19 nC
  • Power Dissipation
    39 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8
  • Applications
    Synchronous rectification, Primary side switch, DC/DC converter, Motor drive control, Load switch

Technical Documents
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