1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiS413DN-T1-GE3

SiS413DN-T1-GE3

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

The SiS413DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current -18 A, Drain Source Resistance 7.6 to 13.2 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for SiS413DN-T1-GE3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiS413DN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -18 A
  • Drain Source Resistance
    7.6 to 13.2 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    35.4 to 110 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8
  • Applications
    Adaptor Switch, Load Switch, Power Management, Mobile Computing

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products