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SiS435DNT-T1-GE3

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The SiS435DNT-T1-GE3 from Vishay is a MOSFET with Continous Drain Current -30 A, Drain Source Resistance 4.4 to 14 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.9 to -0.4 V. Tags: Surface Mount. More details for SiS435DNT-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiS435DNT-T1-GE3
  • Manufacturer
    Vishay
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -30 A
  • Drain Source Resistance
    4.4 to 14 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.9 to -0.4 V
  • Gate Charge
    57 to 180 nC
  • Power Dissipation
    39 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Thin PowerPAK 1212-8T
  • Applications
    Smart Phones, Tablet PCs, and Mobile Computing - Battery Switch - Load Switch - Power Management - Battery Management

Technical Documents
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