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SiSD5300DN-T1-GE3

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The SiSD5300DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 198 A, Drain Source Resistance 87 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 16 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for SiSD5300DN-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiSD5300DN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    N-Channel 30 V (D-S) MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    198 A
  • Drain Source Resistance
    87 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 16 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    27 nC
  • Power Dissipation
    57 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK
  • Applications
    DC/DC converter, Synchronous rectification, Battery management, Oring and load switch

Technical Documents
View details on the manufacturer's website
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