The CPM4-0120-0104JS0A from Wolfspeed is a Silicon Carbide MOSFET that is designed for high-frequency switching applications. It has a drain-source breakdown voltage of 1200 V, a gate threshold voltage of 2.2 V, and a drain-source on-resistance of less than 42 milli-ohms. This MOSFET utilizes Wolfspeed’s 4^th-generation silicon carbide (SiC) technology and integrates a soft body diode with low reverse recovery. It has high blocking voltage with low on-resistance and allows high-speed switching with low capacitance. This MOSFET is available as a die and is ideal for server and telecom PSU, UPS, solar inverters, SMPS, DC-DC converters, and EV charger applications.