The E3M0021120J2 from Wolfspeed is an Automotive-Grade N-Channel Enhancement Mode MOSFET. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.9 V, and a drain-source on-resistance of less than 35 milli-ohms. This MOSFET is built with Wolfspeed's third-generation silicon carbide technology and offers high-speed switching capabilities. It includes an optimized layout with a separate driver source pin, reducing switching losses and gate ringing. This AEC-Q101-qualified MOSFET provides insulation and safety with a 4.7 mm creepage distance between the drain and source terminals. It has a low capacitance and a fast intrinsic diode with a low reverse recovery charge (Qrr). This RoHS-compliant MOSFET is available in a surface-mount package that measures 10.20 x 15.27 x 4.70 mm and is suitable for high-voltage DC-DC converters, EV battery chargers, and motor control applications.