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YJF50G10H

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The YJF50G10H from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 9 to 13 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for YJF50G10H can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJF50G10H
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    9 to 13 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    31 nC
  • Power Dissipation
    41 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    ITO-220AB
  • Applications
    Power switching application, Uninterruptible power supply, DC-DC convertor

Technical Documents
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