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YJG120G10BR

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The YJG120G10BR from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 3.2 to 4.2 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for YJG120G10BR can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJG120G10BR
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    3.2 to 4.2 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    70 nC
  • Power Dissipation
    108 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5060-8L
  • Applications
    Power switching application, Uninterruptible power supply, PD charger, DC-DC convertor

Technical Documents
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