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YJG60G10B

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The YJG60G10B from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 7.5 to 13 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Surface Mount. More details for YJG60G10B can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJG60G10B
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    7.5 to 13 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    32 nC
  • Power Dissipation
    88 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5060
  • Applications
    High Frequency Switching, Synchronous Rectification

Technical Documents
View details on the manufacturer's website
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