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YJG80GP06B

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The YJG80GP06B from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -80 A, Drain Source Resistance 6.5 to 8.5 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -18 to 18 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for YJG80GP06B can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJG80GP06B
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -80 A
  • Drain Source Resistance
    6.5 to 8.5 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -18 to 18 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    82 nC
  • Power Dissipation
    120 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5060-8L
  • Applications
    Power management, Portable equipment

Technical Documents
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