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YJQ2012A

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The YJQ2012A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 10 to 25 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.45 to 1 V. Tags: Surface Mount. More details for YJQ2012A can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJQ2012A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    10 to 25 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.45 to 1 V
  • Gate Charge
    25.5 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN2x2-6L
  • Applications
    PWM application, Load switch

Technical Documents
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