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YJQ4666B

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The YJQ4666B from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -7 A, Drain Source Resistance 24.5 to 60.5 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for YJQ4666B can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJQ4666B
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -7 A
  • Drain Source Resistance
    24.5 to 60.5 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    40.1 nC
  • Power Dissipation
    2.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    Battery protection, Load switch, Power management

Technical Documents
View details on the manufacturer's website
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