1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Yangjie Electronic Technology
  6. YJS2022A

YJS2022A

Download Datasheet Request Quote

Note : Your request will be directed to Yangjie Electronic Technology.

The YJS2022A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -13 A, Drain Source Resistance 10 to 26 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for YJS2022A can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    YJS2022A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -13 A
  • Drain Source Resistance
    10 to 26 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    72.2 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    Battery protection, Load switch, Power management

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products