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FTK2004DFN22

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The FTK2004DFN22 from First Silicon is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 5.8 to 12 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.5 to 1 V. Tags: Surface Mount. More details for FTK2004DFN22 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2004DFN22
  • Manufacturer
    First Silicon
  • Description
    20 V, 18 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    5.8 to 12 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.5 to 1 V
  • Gate Charge
    18 nC
  • Switching Speed
    2.2 to 90 ns
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    DFN22-6L
  • Note
    Input Capacitance :- 1920 pF
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