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YJS4407J

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The YJS4407J from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -12 A, Drain Source Resistance 9 to 16 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -1 V. Tags: Surface Mount. More details for YJS4407J can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJS4407J
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12 A
  • Drain Source Resistance
    9 to 16 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -1 V
  • Gate Charge
    37 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    Power management, Portable equipment

Technical Documents
View details on the manufacturer's website
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