The BSDH10G65E2 from Bourns is a Silicon Carbide (SiC) Schottky Barrier Diode that is ideal for switched-mode power supplies (SMPS), power factor correction (PFC), PV inverters, DC-DC converters, telecommunications, and motor drive applications. It has a forward voltage of up to 1.7 V and a forward current of up to 10 A. This UL 94 V-0 certified flame-retardant SiC diode has a reverse leakage current of less than 50 µA, repetitive peak reverse voltage of up to 650 V and a non-repetitive peak forward current of 60 A. It offers a high peak forward surge current capability and a low reverse leakage current. It is suitable for high-frequency rectification operations which require high efficiency, low power loss, low thermal resistance, and reduced electromagnetic interference (EMI). This RoHS-compliant power diode is available in a through-hole package that measures 30.80 x 10.30 x 4.70 mm.