TPSMB1505CA

Power Diode by Littelfuse (71 more products)

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TPSMB1505CA Image

The TPSMB1505CA from Littelfuse is an AEC-Q101-Qualified Asymmetric TVS Diode that has been designed to protect automotive SiC MOSFET gate driver from overvoltage events. It has a breakdown voltage of 18.5 V and a maximum reverse leakage current of 1 µA. This AEC-Q101-qualified diode has a maximum clamping voltage of up to 24.6 V. It is designed to offer excellent clamping capability with low incremental surge resistance. This power diode undergoes rigorous whisker testing based on JEDEC JESD201A standards and follows ESD protection of data lines by IEC 61000-4-2 standards. It is built with a glass-passivated chip junction for high-reliability automotive applications. This RoHS-compliant power diode is available in a surface-mount package that measures 4.570 x 3.940 mm and is ideal for gate driver protection of SiC MOSFETs, onboard chargers (OBC), and traction inverter applications.

Product Specifications

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Product Details

  • Part Number
    TPSMB1505CA
  • Manufacturer
    Littelfuse
  • Description
    AEC-Q101-Qualified Asymmetric TVS Diode

General

  • Types of Diode
    TVS Diode
  • Configuration of Diode
    Single Diode
  • Technology
    SiC
  • Reverse Current
    1 µA
  • Industry
    Industrial, Commercial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Temperature operating range
    -65 to 175 Degree c
  • Applications
    Gate driver protection of SiC MOSFET, On-board charger (OBC), Traction inverters
  • Package Type
    Surface Mount
  • Package
    DO-214AA
  • Note
    Stand off Voltage :- 15 V, Peak Pulse Power Dissipation :- 600 W, Breakdown Voltage :- 18.5 V

Technical Documents