SCS320AG

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SCS320AG Image

The SCS320AG from ROHM Semiconductor is a SiC Schottky Barrier Diode. It can withstand a reverse voltage of up to 650 V and has a forward current of 20 A. This diode provides a shorter recovery time and has reduced temperature dependence. It has a silicon carbide epitaxial planar-type construction and supports high-speed switching with excellent surge current capability. It is available in a through-hole package.

Product Specifications

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Product Details

  • Part Number
    SCS320AG
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V SiC Schottky Barrier Diode

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Technology
    SiC
  • Forward Current
    20 A
  • Forward Voltage
    1.35 to 1.71 V
  • Reverse Current
    0.06 to 400 uA
  • Reverse Voltage
    650 V
  • Repetitive Peak Reverse Voltage
    650 V
  • Non-Repetitive Peak Forward Current
    104 to 450 A
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Applications
    High-speed switching possible, High surge current capability
  • Package Type
    Through Hole
  • Package
    TO-220ACGE
  • Total Capacitance
    91 to 1000 pF
  • Note
    Power Dissipation :- 115 W

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