TRS4E65F

Power Diode by Toshiba (457 more products)

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The TRS4E65F from Toshiba is a Power Diode with Forward Voltage 1.6 V, Reverse Current 20 uA, Repetitive Peak Reverse Voltage 650 V, Non-Repetitive Peak Forward Current 39 A, Peak Reverse Voltage 650 V. Tags: Through Hole. More details for TRS4E65F can be seen below.

Product Specifications

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Product Details

Part Number
TRS4E65F
Manufacturer
Toshiba
Description
20 uA, Schottky Barrier Diode

General

Types of Diode

Schottky Barrier Diode
Configuration of Diode

Single Diode
Technology

SiC
Forward Voltage

1.6 V
Reverse Current

20 uA
Repetitive Peak Reverse Voltage

650 V
Non-Repetitive Peak Forward Current

39 A
Peak Reverse Voltage

650 V
Industry

Industrial, Commercial
RoHS Compliant

Yes
Temperature operating range

-55 to 175 Degree C
Applications

Power Factor Correction, Solar Inverters, Uninterruptible Power Supplies, DC-DC Converters.
Dimensions

10.05 x 15.3 x 4.45 mm
Package Type

Through Hole
Package

TO-220-2L
Total Capacitance

16 pF