The BM3G007MUV-LBE2 from ROHM Semiconductor is a GaN HEMT Power Stage IC that is ideal for industrial equipment, power supplies with high power density, high-efficiency demand, or bridge topologies such as totem-pole PFC, LLC power supply and adaptor applications. It requires an input voltage of 6.25 - 30 V. This power management IC (PMIC) has been designed to guarantee long-time support for industrial markets. It offers a wide input voltage operating range with low quiescent voltage, operating current, and propagation delay, thereby providing an optimum solution for all electronics systems that require high power density and efficiency. This power stage IC is integrated with a 650 V enhancement GaN HEMT transistor and a Silicon driver to reduce the parasitic inductance caused by printed circuit board (PCB) and wire bonding. This RoHS-compliant power stage delivers an adjustable gate drive strength that contributes to low electromagnetic interference (EMI) while providing an accurate output signal. It is also equipped with under voltage lockout (UVLO) and thermal shutdown protection circuitries in a cost-effective package to prevent false triggers and over-temperature-related damages. This PMIC is available in a surface-mount package that measures 8 x 8 x 1 mm.
