Junction Field Effect Transistors (JFETs) - Page 12

685 Junction Field Effect Transistors (JFETs) from 16 manufacturers meet your specification.
Description:0.31 W, 25 V, 10 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
25 V
Power Dissipation:
0.31 W
Operating Temperature:
-65 to 150 Degree C
Package Type:
Die
more info
Description:1.8 W, -40 V, 50 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial, Military
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-40 V
Continous Drain Current:
8 to 80 mA
Drain Source Resistance:
60 Ohm
Power Dissipation:
1.8 W
Operating Temperature:
-65 to 200 Degree C
Package Type:
Through Hole
Package:
TO-18
more info
Description:0.35 W, 0.7 to 1 V , -5 pA, , N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
0.7 to 1 V
Continous Drain Current:
6 mA
Drain Source Breakdown Voltage:
0.3 to 0.4 V
Drain Source Resistance:
60 Ohm
Power Dissipation:
0.35 W
RoHS Compliant:
Yes
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:30 V, 50 mA, P-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
P-Channel
Number of Channel:
Single
Gate Source Voltage:
30 V
Drain Source Resistance:
300 Ohm
Power Dissipation:
0.35 W
Operating Temperature:
-55 to 135 Degree C
Package Type:
Surface Mount
Package:
SOT-23
more info
Description:P-channel Junction Field Effect Transistor for Chopper Applications
Industry:
Industrial, Commercial, Medical, Military
Transistor Polarity:
P-Channel
Number of Channel:
Single
Gate Source Voltage:
30 V
Drain Source Resistance:
75 Ohm
Power Dissipation:
360 mW
RoHS Compliant:
Yes
Operating Temperature:
-55 to 125 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:35 V N-Channel SiC Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
35 V
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
35 V
Drain Source Resistance:
100 Ohm
Power Dissipation:
0.625 W
RoHS Compliant:
Yes
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:1700 V, 0.1 A, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
1.5 Ohm
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-247
more info
Description:0.35 W, -40 V, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-40 V
Power Dissipation:
0.35 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:30 V, 10 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
20 mA
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
250 Ohm
Power Dissipation:
0.2 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Surface Mount
Package:
SOT-23
more info
Description:-40 to -57 V, N-Channel Junction Field effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-40 to -57 V
Continous Drain Current:
50 mA
Drain Source Resistance:
60 Ohm
Power Dissipation:
1.8 W
Operating Temperature:
-65 to 200 Degree C
Package Type:
Through Hole
Package:
TO-46
more info

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